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XP151A13COMR

20V N-Channel Enhancement Mode MOSFET
VDS= 20V
RDS(ON), Vgs@ 4.5V, Ids@3.6A<85mΩ
RDS(ON), Vgs@ 2.5V, Ids@ 2.0A<115mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

XP151A13AOMR

FDN335N

20V N-Channel Enhancemen t ModeMOSFET
VDS= 20V
RDS(ON), Vgs@ 2.5V, Ids@ 1.7A= 70mΩ
RDS(ON), Vgs@ 2.5V, Ids@ 1.5A=100mΩ
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

FDN306P

-12V P-Channel Enhancemen t ModeMOSFET
Features
? –2.6 A, –12 V. RDS(ON) = 40 mΩ @ VGS = –4.5 V
RDS(ON) = 50 mΩ @ VGS = –2.5 V
RDS(ON) = 80 mΩ @ VGS = –1.8 V
? Fast switching speed
Applications
? Battery management
? Load switch
? Battery protection

BSS84

-50V P-Channel Enhancement Mode MOSFET
VDS= -50V
RDS(ON), Vgs@-10V, Ids@-0.1A<8Ω
RDS(ON), Vgs@-5, Ids@-0.1A <10Ω
Features
Advanced trench process technology
High Density Cell Design For Ultra Low On-Resistance
Package Dimensions

2SC3356(4G)

TRANSISTOR (NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO: 20 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃

2SC3356

TRANSISTOR(NPN)
FEATURES
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.1 A
Collector-base voltage
V(BR)CBO: 20 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃

PTS9926B

Features
? BVDSS>20V, RDS(ON)=11mΩ(Typ)@VGS=10V
? Low On-Resistance
? Fast Switching
    encapsulation:SOP-8
? Lead-Free,Hg-Free, Green Product
PTS9926B designed by the trench processing techniques to
achieve extremely low on-resistance. And fast switching
speed and improved transfer effective . These features
combine to make this design an extremely efficient and
reliable device for variety of DC-DC applications.

PTS2017

20V/17A N-Channel Advanced Power MOSFET
Features
? Very Low RDS(on) @ 3.3V Logic.
? 3.3V Logic Level Control
? SOP8 Package
? Pb?Free, RoHS Compliant
Applications
? Low Side Load Switch
? Battery Switch
? Optimized for Power Management Applications for
Portable Products, such as Aeromodelling, Power bank,
Brushless motor, Main board , and Others

PT4953B

-20V P-Channel Enhancemen t ModeMOSFET
VDS= -2 0V
RDS(ON), Vgs@-4.5V, Ids@-3.0A = 100mΩ
RDS(ON), Vgs@-2.5V, Ids@-2.0A = 120mΩ
Features
High power and current handing capability
Lead free product is acq uired

PTMPD0203

FEATURE
·lndependent Pinout to Each Device to
Each Device to Ease Circuit Design
·High Current Schottky Diode
·Featuring a MOSFET and a
·Schottky Barrier Diode

APPLICATION
·Optinized for Portable Applications Like Cell Phones
Digital Cameras,Media Players,etc
·DC-DC Buck Circuits
·Li-ion Battery Applications
·Color Display and Camera Flash Regulators

PT89S003F


工作電壓:2.4V-5.5V
工作溫度:-40~85°C
封裝:PT89S003FQ20R(QFN20)    PT89S003FX20U(TSSOP20)
內核:高速1T 8051
FIash ROM:16 Kbytes Flash ROM(MOVC禁止尋址0000H~00FFH)可重復寫入1萬次
IAP:可code option 成0K、0.5K、1K、或16K
EEPROM:獨立的128bytes,可重復寫入10萬次,10年以上保存壽命
SRAM:內部256bytes+外部256bytes
系統時鐘(fsys):內建高頻16MHz振蕩器(FHRC)
作為系統時鐘源時,fsys可通過編程器選擇設定為16/8/4/1.33MHz
頻率誤差:跨越(2.9V~5.5V)及(-20~85°C)應用環境,不超過±1%
內置高頻晶體振蕩器電路
可外接2~16MHz振蕩器
作為系統時鐘源時,fsys可通過編程器選擇使用外接晶振/1/2/4/12這四種分頻中的一種
IC系統時鐘(fsys)對應的工作電壓范圍:
>12MHz@2.9~5.5V
≤12MHz@2.4~5.5V

PTN4559

封裝形式:PDFN5X6
類型:N+P
ESD Diode:否/否
VDS (V):60/-60
VGS (V):±20/±20
VTH (V)Typ:1.9/-2.5
ID* (A) 25°C:6/-5
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:60/75
RDS(ON) (mΩ max) at VGS= 4.5V:80/95
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:風扇

PTS4559

封裝形式:SOP8
類型:N+P
ESD Diode:否/否
VDS (V):60/-60
VGS (V):±20/±20
VTH (V)Typ:1.9/-2.5
ID* (A) 25°C:6/-5
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:60/75
RDS(ON) (mΩ max) at VGS= 4.5V:80/95
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:風扇

PTS4614

封裝形式:SOP8
類型:N+P
ESD Diode:否/否
VDS (V):40/-40
VGS (V):±20/±20
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:7/-6
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:-
RDS(ON) (mΩ max) at VGS= 4.5V:20/35
RDS(ON) (mΩ max) at VGS= 2.5V:30/45
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:風扇

PTS4616

封裝形式:SOP8
類型:N+P
ESD Diode:否/否
VDS (V):30/-30
VGS (V):±20/±20
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:8/-7
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:20/28
RDS(ON) (mΩ max) at VGS= 4.5V:25/40
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:風扇

PTF640

封裝形式:TO-220F
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:18
PD* (W) 25°C:36
RDS(ON) (mΩ max) at VGS= 10V:0.18
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:HID SMPS

PTP640

封裝形式:TO-220
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:18
PD* (W) 25°C:90
RDS(ON) (mΩ max) at VGS= 10V:0.18
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:HID SMPS

PTS4503

封裝形式:SOP8
類型:N+P
ESD Diode:否/否
VDS (V):30/-30
VGS (V):±12/±16
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:6.5/-5.5
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:26/28
RDS(ON) (mΩ max) at VGS= 4.5V:35/45
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:無線充電、移動電源

PTF630

封裝形式:TO-220F
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:9
PD* (W) 25°C:36
RDS(ON) (mΩ max) at VGS= 10V:0.4
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:HID SMPS

PTP630

封裝形式:TO-252
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±30
VTH (V)Typ:4
ID* (A) 25°C:9
PD* (W) 25°C:90
RDS(ON) (mΩ max) at VGS= 10V:0.4
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用: HID SMPS

PTS4606

封裝形式:SOP8
類型:N+P
ESD Diode:否/否
VDS (V):30/-30
VGS (V):±20/±20
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:5.8/-5.1
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:31/48
RDS(ON) (mΩ max) at VGS= 4.5V:43/72
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:無線充電、移動電源

PT4606

封裝形式:SOP8
類型:N+P
ESD Diode:否/否
VDS (V):30/-30
VGS (V):±20/±20
VTH (V)Typ:1.6/-1.6
ID* (A) 25°C:5.8/-6.5
PD* (W) 25°C:2月2日
RDS(ON) (mΩ max) at VGS= 10V:31/46
RDS(ON) (mΩ max) at VGS= 4.5V:43/72
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:無線充電、移動電源

PTD20N20

封裝形式:TO-252
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:20
PD* (W) 25°C:45
RDS(ON) (mΩ max) at VGS= 10V:75
RDS(ON) (mΩ max) at VGS= 4.5V:80
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用: TV

PTY20N20

封裝形式:TO-263
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:20
PD* (W) 25°C:60
RDS(ON) (mΩ max) at VGS= 10V:75
RDS(ON) (mΩ max) at VGS= 4.5V:80
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用: TV

PTP20N20

封裝形式:TO-252
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:20
PD* (W) 25°C:60
RDS(ON) (mΩ max) at VGS= 10V:75
RDS(ON) (mΩ max) at VGS= 4.5V:80
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用: TV

PTD10N20

封裝形式:TO-252
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:3
ID* (A) 25°C:10
PD* (W) 25°C:25
RDS(ON) (mΩ max) at VGS= 10V:135
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用: TV

PTP10N20

封裝形式:TO-220
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:3
ID* (A) 25°C:10
PD* (W) 25°C:30
RDS(ON) (mΩ max) at VGS= 10V:135
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用: TV

PTD05N20

封裝形式:SOT23-3L
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:5
PD* (W) 25°C:20
RDS(ON) (mΩ max) at VGS= 10V:135
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用: LED

PTL02N20

封裝形式:SOT23-3L
類型:單N
ESD Diode:
VDS (V):200
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:2
PD* (W) 25°C:1
RDS(ON) (mΩ max) at VGS= 10V:150
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用: LED

PTD256

封裝形式:TO-252
類型:單N
ESD Diode:
VDS (V):150
VGS (V):±20
VTH (V)Typ:2
ID* (A) 25°C:19
PD* (W) 25°C:60
RDS(ON) (mΩ max) at VGS= 10V:90
RDS(ON) (mΩ max) at VGS= 4.5V:105
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:TV  LED

PTD254

封裝形式:TO-252
類型:單N
ESD Diode:
VDS (V):150
VGS (V):±20
VTH (V)Typ:2
ID* (A) 25°C:28
PD* (W) 25°C:45
RDS(ON) (mΩ max) at VGS= 10V:50
RDS(ON) (mΩ max) at VGS= 4.5V:60
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:TV  LED

PTD12N15

封裝形式:TO-252
類型:單N
ESD Diode:
VDS (V):150
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:12
PD* (W) 25°C:30
RDS(ON) (mΩ max) at VGS= 10V:160
RDS(ON) (mΩ max) at VGS= 4.5V:360
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:POE

PTD06N15

封裝形式:TO-252
類型:單N
ESD Diode:
VDS (V):150
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:6
PD* (W) 25°C:16
RDS(ON) (mΩ max) at VGS= 10V:300
RDS(ON) (mΩ max) at VGS= 4.5V:360
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:POE

PTS02N15

封裝形式:TO-220
類型:單N
ESD Diode:
VDS (V):150
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:2
PD* (W) 25°C:2.5
RDS(ON) (mΩ max) at VGS= 10V:300
RDS(ON) (mΩ max) at VGS= 4.5V:360
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:POE

PTP4115

封裝形式:TO-220
類型:單N
ESD Diode:
VDS (V):150
VGS (V):±25
VTH (V)Typ:3.5
ID* (A) 25°C:100
PD* (W) 25°C:360
RDS(ON) (mΩ max) at VGS= 10V:11.5
RDS(ON) (mΩ max) at VGS= 4.5V:-
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:EBIKE

PTD15N10

封裝形式:TO-252
類型:單N
ESD Diode:
VDS (V):100
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:15
PD* (W) 25°C:30
RDS(ON) (mΩ max) at VGS= 10V:90
RDS(ON) (mΩ max) at VGS= 4.5V:100
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:Lighting

PTL03N10A

封裝形式:SOT23-3L
類型:單N
ESD Diode:
VDS (V):100
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:3
PD* (W) 25°C:1.2
RDS(ON) (mΩ max) at VGS= 10V:130
RDS(ON) (mΩ max) at VGS= 4.5V:145
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:Lighting

PTL03N10

封裝形式:SOT23
類型:單N
ESD Diode:
VDS (V):100
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:2.6
PD* (W) 25°C:1.2
RDS(ON) (mΩ max) at VGS= 10V:165
RDS(ON) (mΩ max) at VGS= 4.5V:180
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:Lighting

PT01N10

封裝形式:SOT23
類型:單N
ESD Diode:
VDS (V):100
VGS (V):±20
VTH (V)Typ:1.8
ID* (A) 25°C:1
PD* (W) 25°C:1
RDS(ON) (mΩ max) at VGS= 10V:600
RDS(ON) (mΩ max) at VGS= 4.5V:650
RDS(ON) (mΩ max) at VGS= 2.5V:-
RDS(ON) (mΩ max) at VGS= 1.8V:-
典型應用:Lighting
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